Search results for "Noise processes and phenomena"

Switching times in long-overlap Josephson junctions subject to thermal fluctuations and non-Gaussian noise sources

2014

We investigate the superconducting lifetime of long current-biased Josephson junctions, in the presence of Gaussian and non-Gaussian noise sources. In particular, we analyze the dynamics of a Josephson junction as a function of the noise signal intensity, for different values of the parameters of the system and external driving currents. We find that the mean lifetime of the superconductive state is characterized by nonmonotonic behavior as a function of noise intensity, driving frequency and junction length. We observe that these nonmonotonic behaviours are connected with the dynamics of the junction phase string during the switching towards the resistive state. An important role is played…

EFFECT OF A FLUCTUATING ELECTRIC FIELD ON ELECTRON SPIN DEPHASING TIME IN III–V SEMICONDUCTORS

2012

We investigate the electron spin dephasing in low n-doped GaAs semiconductor bulks driven by a correlated fluctuating electric field. The electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin relaxation times are computed through the D’yakonov–Perel process, which is the only relevant relaxation mechanism in zinc-blende semiconductors. The decay of initial spin polarization of conduction electrons is calculated for different values of field strength, noise intensity and noise correlation time. For values of noise correlation time compara…

New insights into electron spin dynamics in the presence of correlated noise

2011

The changes of the spin depolarization length in zinc-blende semiconductors when an external component of correlated noise is added to a static driving electric field are analyzed for different values of field strength, noise amplitude and correlation time. Electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin depolarization is studied by examinating the decay of the initial spin polarization of the conduction electrons through the D'yakonov-Perel process, the only relevant relaxation mechanism in III-V crystals. Our results show that, f…

Noise-Induced Effects on electron transport in Silicon Structures

Enhancement of electron spin lifetime in GaAs crystals: the benefits of dichotomous noise

2013

The electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field is investigated. Two different sources of fluctuations are considered: (i) a symmetric dichotomous noise and (ii) a Gaussian correlated noise. Monte Carlo numerical simulations show, in both cases, an enhancement of the spin relaxation time by increasing the amplitude of the external noise. Moreover, we find that the electron spin lifetime versus the noise correlation time: (i) increases up to a plateau in the case of dichotomous random fluctuations, and (ii) shows a nonmonotonic behaviour with a maximum in the case of bulks subjected to a Gaussian correlated noise.

Noise-induced effects in nonlinear relaxation of condensed matter systems

2015

Abstract Noise-induced phenomena characterise the nonlinear relaxation of nonequilibrium physical systems towards equilibrium states. Often, this relaxation process proceeds through metastable states and the noise can give rise to resonant phenomena with an enhancement of lifetime of these states or some coherent state of the condensed matter system considered. In this paper three noise induced phenomena, namely the noise enhanced stability, the stochastic resonant activation and the noise-induced coherence of electron spin, are reviewed in the nonlinear relaxation dynamics of three different systems of condensed matter: (i) a long-overlap Josephson junction (JJ) subject to thermal fluctuat…

Electron dynamical response in InP semiconductors driven by fluctuating electric fields

2015

Abstract The complexity of electron dynamics in low-doped n-type InP crystals operating under fluctuating electric fields is deeply explored and discussed. In this study, we employ a multi-particle Monte Carlo approach to simulate the non-linear transport of electrons inside the semiconductor bulk. All possible scattering events of hot electrons in the medium, the main details of the band structure, as well as the heating effects, are taken into account. The results presented in this study derive from numerical simulations of the electron dynamical response to the application of a sub-Thz electric field, fluctuating for the superimposition of an external source of Gaussian correlated noise.…